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CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder  Bismuth Telluride

CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride

2024-04-30
in Chemicals&Materials
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Overview of CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride

Telluride and selenide compounds play a significant role in the field of semiconductors, particularly in the development of advanced electronic and optoelectronic devices. These materials belong to the chalcogenide family, characterized by their ability to form compounds with elements from groups IV-VI in the periodic table.


Tellurides: Compounds containing tellurium (Te) as the chalcogen. Examples include cadmium telluride (CdTe), mercury telluride (HgTe), and zinc telluride (ZnTe). These materials have found applications in solar cells, infrared detectors, and high-speed electronics due to their tunable bandgap, high electron mobility, and good thermal stability.


Selenides: Similar to tellurides, but with selenium (Se) replacing tellurium. Notable examples are cadmium selenide (CdSe), gallium selenide (GaSe), and zinc selenide (ZnSe). Selenide compounds are widely used in light-emitting diodes (LEDs), laser diodes, and solar cells due to their direct bandgap properties and efficient light absorption/emission capabilities.

Feature of CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride

Direct Bandgap: Many telluride and selenide semiconductors have direct bandgaps, which facilitate efficient light emission and absorption processes. This makes them suitable for optoelectronic applications such as LEDs and lasers.


Tunable Bandgap: The bandgap of these materials can be adjusted by alloying or altering the composition (e.g., CdSe to CdTe), enabling customization for specific device requirements across a wide spectrum of wavelengths.


High Electron Mobility: Materials like HgCdTe exhibit high electron mobility, which is crucial for high-speed electronic devices and low-noise detector applications.


Thermal Stability: Some tellurides and selenides, like ZnTe and ZnSe, demonstrate good thermal stability, making them suitable for high-temperature operation and processing.


Non-Toxic Alternatives: With increasing environmental concerns, there’s a push towards exploring less toxic alternatives to commonly used semiconductors. For instance, Cd-based tellurides and selenides are being replaced or combined with less toxic elements like Mg or Mn in some applications.

CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder  Bismuth Telluride

(CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride)

Parameters of CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride

Bismuth Telluride (Bi2Te3), CAS number 1304-82-1, is a highly sought-after n-type semiconductor thermoelectric material with an exceptional purity level of 99.99%. This compound finds its roots in the binary compound of bismuth (Bi) and tellurium (Te), known for its unique properties that make it an ideal candidate for various applications in the field of thermoelectricity.

The thermoelectric effect, which converts temperature differences into electrical voltage, is what sets Bi2Te3 apart. As a n-type semiconductor, it has an excess of free electrons, allowing it to efficiently generate electricity when subjected to temperature gradients. The material’s high Seebeck coefficient, a measure of the voltage generated per degree Celsius temperature difference, and low thermal conductivity make it particularly attractive for waste heat recovery and power generation systems.

In terms of structure, Bi2Te3 forms a rhombohedral crystal lattice, characterized by its layered arrangement of bismuth and tellurium atoms. This unique crystal structure contributes to its excellent thermoelectric performance by separating charge carriers (electrons) from heat-carrying phonons, minimizing heat dissipation and enhancing energy conversion efficiency.

The high purity of 99.99% ensures minimal impurities, which can degrade the material’s performance. Impurities can disrupt the crystal structure or introduce additional charge carriers, reducing the thermoelectric figure of merit (ZT), a critical parameter that quantifies the overall efficiency of a thermoelectric material. Bi2Te3 powders with such high purity are commonly used in thin film deposition processes, bulk devices, and nanostructured composites to optimize thermoelectric devices.

Applications for Bi2Te3 as a thermoelectric material span across multiple industries. In the renewable energy sector, it is employed in waste heat recovery systems, where it converts heat from industrial processes into electricity. It is also utilized in power generation devices like thermoelectric generators (TEGs) for portable electronics, space exploration, and remote sensing equipment.

Moreover, Bi2Te3 finds applications in advanced cooling technologies, where its Seebeck effect can be harnessed to create Peltier coolers, providing efficient temperature control without moving parts. In the field of electronic devices, it is used in thermoelectric cooling modules for compact, silent cooling solutions.

In conclusion, Bi2Te3 with CAS number 1304-82-1, as a high-purity n-type semiconductor thermoelectric material, holds significant potential due to its exceptional thermoelectric properties. Its unique crystal structure, combined with a near-perfect purity, enables efficient conversion of temperature differences into electrical power, making it a versatile material for various technological advancements in energy harvesting, waste heat management, and electronic cooling.

CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder  Bismuth Telluride

(CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride)

FAQ of Semiconductor Materials

What is the primary advantage of using CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride?

Their primary advantages lie in their tunable bandgap, direct bandgap nature for efficient light interaction, and high electron mobility, which are essential for advanced optoelectronic and high-performance electronic devices.
Are CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride compounds environmentally friendly?

While they offer excellent semiconductor properties, some telluride and selenide compounds, like those containing cadmium, pose environmental and health risks. Research is ongoing to develop more eco-friendly alternatives or to implement safe disposal methods.
How do CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride compare to silicon in terms of performance?

Silicon is the most widely used semiconductor due to its abundance, stability, and well-established manufacturing processes. Telluride and selenide compounds, however, offer advantages in specific areas such as higher electron mobility, direct bandgap properties, and tunability, making them preferred for specialized applications like high-frequency electronics, photovoltaics, and infrared detection, where silicon falls short.
Can you grow high-quality single crystals of telluride and selenide semiconductors?

Yes, high-quality single crystals of these materials can be grown using techniques like Bridgman method, chemical vapor transport, or molecular beam epitaxy. Single crystals are desirable for many applications as they provide uniform electronic properties and reduced defects.

What are some future directions in the research of CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bi2Te3 Powder Powder Bismuth Telluride?

Future research directions include developing new materials with improved performance and reduced toxicity, enhancing device efficiency and scalability, exploring novel device architectures like 2D materials and quantum dots, and integrating these materials into next-generation technologies such as flexible electronics, quantum computing, and advanced sensor systems.

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