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CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder  Bi2Te3 Powder

CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder

2024-04-30
in Chemicals&Materials
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Overview of CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder

Telluride and selenide compounds play a significant role in the field of semiconductors, particularly in the development of advanced electronic and optoelectronic devices. These materials belong to the chalcogenide family, characterized by their ability to form compounds with elements from groups IV-VI in the periodic table.


Tellurides: Compounds containing tellurium (Te) as the chalcogen. Examples include cadmium telluride (CdTe), mercury telluride (HgTe), and zinc telluride (ZnTe). These materials have found applications in solar cells, infrared detectors, and high-speed electronics due to their tunable bandgap, high electron mobility, and good thermal stability.


Selenides: Similar to tellurides, but with selenium (Se) replacing tellurium. Notable examples are cadmium selenide (CdSe), gallium selenide (GaSe), and zinc selenide (ZnSe). Selenide compounds are widely used in light-emitting diodes (LEDs), laser diodes, and solar cells due to their direct bandgap properties and efficient light absorption/emission capabilities.

Feature of CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder

Direct Bandgap: Many telluride and selenide semiconductors have direct bandgaps, which facilitate efficient light emission and absorption processes. This makes them suitable for optoelectronic applications such as LEDs and lasers.


Tunable Bandgap: The bandgap of these materials can be adjusted by alloying or altering the composition (e.g., CdSe to CdTe), enabling customization for specific device requirements across a wide spectrum of wavelengths.


High Electron Mobility: Materials like HgCdTe exhibit high electron mobility, which is crucial for high-speed electronic devices and low-noise detector applications.


Thermal Stability: Some tellurides and selenides, like ZnTe and ZnSe, demonstrate good thermal stability, making them suitable for high-temperature operation and processing.


Non-Toxic Alternatives: With increasing environmental concerns, there’s a push towards exploring less toxic alternatives to commonly used semiconductors. For instance, Cd-based tellurides and selenides are being replaced or combined with less toxic elements like Mg or Mn in some applications.

CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder  Bi2Te3 Powder

(CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder)

Parameters of CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder

Bismuth Telluride (Bi2Te3), with the CAS number 1304-82-1, is a highly sought-after N-type semiconductor thermoelectric material due to its exceptional properties. It belongs to the family of tellurides, specifically the binary compound of bismuth and tellurium. This material exhibits extraordinary performance in converting temperature differences into electrical energy, making it an essential component in various thermoelectric devices.

At 99.99% purity, Bi2Te3 powder ensures a high level of efficiency and reliability in practical applications. The exceptional purity allows for minimal impurities that could hinder its thermoelectric properties, thus maximizing the conversion of thermal energy to electricity. The N-type character refers to the majority charge carriers being electrons, which is crucial for certain thermoelectric systems where efficient heat-to-electricity conversion is desired.

The crystalline structure of Bi2Te3 is in a rhombohedral form, which contributes to its superior thermoelectric performance. Its high Seebeck coefficient, or thermopower, means that it generates a significant voltage in response to temperature gradients. Additionally, Bi2Te3 has a relatively low lattice thermal conductivity, which helps to minimize heat dissipation, further enhancing the thermoelectric efficiency.

In terms of physical properties, Bi2Te3 is known for its high melting point, around 630°C, making it suitable for operating in a wide range of temperatures. It also possesses a moderate density, typically around 6.3 g/cm³, which aids in the fabrication of lightweight thermoelectric generators and coolers. Furthermore, the material is mechanically stable and exhibits good chemical resistance, ensuring durability in various environments.

Research and development in thermoelectric materials have been focused on improving the figure of merit, ZT (ZT = S²σ/κ), where S is the Seebeck coefficient, σ is the electrical conductivity, and κ is the thermal conductivity. Bi2Te3, with its inherent advantages, has been a key material in pushing the boundaries of ZT values, leading to more efficient energy conversion in devices like waste heat recovery, refrigeration, and power generation.

In conclusion, Bi2Te3 (CAS 1304-82-1) as an N-type semiconductor thermoelectric material with 99.99% purity offers a unique combination of high thermopower, low lattice thermal conductivity, and robust mechanical properties. Its exceptional performance makes it a vital component in modern technologies aiming to harness waste heat and convert it into useful electrical energy, contributing to a greener and more sustainable future. Further advancements in understanding and optimizing this material can lead to even greater improvements in thermoelectric efficiency, paving the way for widespread adoption in various industries.

CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder  Bi2Te3 Powder

(CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder)

FAQ of Semiconductor Materials

What is the primary advantage of using CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder?

Their primary advantages lie in their tunable bandgap, direct bandgap nature for efficient light interaction, and high electron mobility, which are essential for advanced optoelectronic and high-performance electronic devices.
Are CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder compounds environmentally friendly?

While they offer excellent semiconductor properties, some telluride and selenide compounds, like those containing cadmium, pose environmental and health risks. Research is ongoing to develop more eco-friendly alternatives or to implement safe disposal methods.
How do CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder compare to silicon in terms of performance?

Silicon is the most widely used semiconductor due to its abundance, stability, and well-established manufacturing processes. Telluride and selenide compounds, however, offer advantages in specific areas such as higher electron mobility, direct bandgap properties, and tunability, making them preferred for specialized applications like high-frequency electronics, photovoltaics, and infrared detection, where silicon falls short.
Can you grow high-quality single crystals of telluride and selenide semiconductors?

Yes, high-quality single crystals of these materials can be grown using techniques like Bridgman method, chemical vapor transport, or molecular beam epitaxy. Single crystals are desirable for many applications as they provide uniform electronic properties and reduced defects.

What are some future directions in the research of CAS 1304-82-1 N P Type Semiconductor Thermoelectric Materials 99.99% Bismuth Telluride Powder Bi2Te3 Powder?

Future research directions include developing new materials with improved performance and reduced toxicity, enhancing device efficiency and scalability, exploring novel device architectures like 2D materials and quantum dots, and integrating these materials into next-generation technologies such as flexible electronics, quantum computing, and advanced sensor systems.

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